| PART |
Description |
Maker |
| MB81464 MB81464-15 MB81464-12 |
MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY
MOS 262144 Bit DRAM
|
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
| UPD424190A |
262144 x 18-Bit Dynamic CMOS RAM
|
NEC Electronics
|
| TC514260BFT TC514260BJ |
262144 WORD X 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
| M5M44258-7 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| NTE21256 |
262,144-Bit Dynamic Random Access Memory (DRAM)
|
NTE[NTE Electronics]
|
| AK5368192WP-70 |
8,388,608 by 36 Bit CMOS Dynamic Random Access Memory
|
http://
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK481024 AK581024AG AK581024AS |
1,048,576 x 8 bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK536512W AK532512W AK532256AW |
262,144 Word by 32 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK591024 AK59256 |
4,194,304 Word x 9 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
http://
|
| AK5321024 |
2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
